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SQJ941EP-T1_GE3

SQJ941EP-T1_GE3 Vishay


sqj941ep.pdf Hersteller: Vishay
Trans MOSFET P-CH 30V 8A Automotive 8-Pin PowerPAK SO T/R
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Technische Details SQJ941EP-T1_GE3 Vishay

Description: MOSFET 2P-CH 30V 8A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.

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SQJ941EP-T1-GE3 SQJ941EP-T1-GE3 Hersteller : Vishay Siliconix sqj941ep.pdf Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar