Technische Details SQJ941EP-T1_GE3 Vishay
Description: MOSFET 2P-CH 30V 8A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ941EP-T1_GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SQJ941EP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 8A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |