auf Bestellung 3746 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 2.96 EUR |
| 22+ | 2.44 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.52 EUR |
| 3000+ | 1.29 EUR |
| 6000+ | 1.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ974EP-T1_BE3 Vishay
Description: DUAL N-CHANNEL 100-V (D-S) 175C, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V, Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote SQJ974EP-T1_BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SQJ974EP-T1_BE3 | Hersteller : Vishay |
 Dual N-Channel MOSFET |
Produkt ist nicht verfügbar |
||
 |
SQJ974EP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
|
|
|
SQJ974EP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
|
| SQJ974EP-T1-BE3 | Hersteller : Vishay | MOSFET DUAL N-CHANNEL 100-V (D-S) 175 |
Produkt ist nicht verfügbar |