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SQJ980AEP-T1_GE3

SQJ980AEP-T1_GE3 Vishay / Siliconix

sqj980ap.pdf Hersteller: Vishay / Siliconix
MOSFET Dual N-Channel 75V AEC-Q101 Qualified
auf Bestellung 31643 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+3.04 EUR
21+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
3000+ 1.26 EUR
6000+ 1.2 EUR
Mindestbestellmenge: 18
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Technische Details SQJ980AEP-T1_GE3 Vishay / Siliconix

Description: MOSFET 2 N-CH 75V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

Weitere Produktangebote SQJ980AEP-T1_GE3 nach Preis ab 1.55 EUR bis 3.41 EUR

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SQJ980AEP-T1_GE3 SQJ980AEP-T1_GE3 Hersteller : Vishay Siliconix sqj980ap.pdf Description: MOSFET 2 N-CH 75V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2984 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.41 EUR
10+ 3.04 EUR
100+ 2.37 EUR
500+ 1.96 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 8
SQJ980AEP-T1_GE3 SQJ980AEP-T1_GE3 Hersteller : Vishay Siliconix sqj980ap.pdf Description: MOSFET 2 N-CH 75V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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