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SQJA06EP-T1_GE3

SQJA06EP-T1_GE3 Vishay Siliconix

sqja06ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 57A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 2995 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.94 EUR
10+ 2.63 EUR
100+ 2.05 EUR
500+ 1.7 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
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Technische Details SQJA06EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 57A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.

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SQJA06EP-T1_GE3 SQJA06EP-T1_GE3 Hersteller : Vishay / Siliconix sqja06ep.pdf MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
auf Bestellung 30000 Stücke:
Lieferzeit 14-28 Tag (e)
SQJA06EP-T1_GE3 SQJA06EP-T1_GE3 Hersteller : Vishay Siliconix sqja06ep.pdf Description: MOSFET N-CH 60V 57A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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