SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

Hersteller: Vishay / Siliconix
MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified
sqjb40ep-1765035.pdf
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auf Bestellung 5397 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQJB40EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 40V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQJB40, Supplier Device Package: PowerPAK® SO-8 Dual, Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 34W, Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V.

Preis SQJB40EP-T1_GE3 ab 0 EUR bis 0 EUR

SQJB40EP-T1_GE3
SQJB40EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sqjb40ep.pdf
auf Bestellung 636 Stücke
Lieferzeit 21-28 Tag (e)
SQJB40EP-T1_GE3
SQJB40EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB40
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
sqjb40ep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB40EP-T1_GE3
SQJB40EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
Base Part Number: SQJB40
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
sqjb40ep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen