SQJQ130EL-T1_GE3 Vishay Semiconductors
auf Bestellung 3408 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.53 EUR |
| 10+ | 7.15 EUR |
| 25+ | 6.76 EUR |
| 100+ | 5.8 EUR |
| 250+ | 5.46 EUR |
| 500+ | 5.15 EUR |
| 1000+ | 4.52 EUR |
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Technische Details SQJQ130EL-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 445A (Tc), Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V.
Weitere Produktangebote SQJQ130EL-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SQJQ130EL-T1_GE3 | Hersteller : VISHAY |
 SQJQ130EL-T1-GE3 SMD N channel transistors |
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SQJQ130EL-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 445A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQJQ130EL-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 445A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V |
Produkt ist nicht verfügbar |