SQJQ466E-T1_GE3 Vishay / Siliconix
auf Bestellung 128 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.53 EUR |
| 10+ | 5.49 EUR |
| 25+ | 5.33 EUR |
| 100+ | 4.45 EUR |
| 250+ | 4.32 EUR |
| 500+ | 3.98 EUR |
| 1000+ | 3.38 EUR |
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Technische Details SQJQ466E-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 200A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJQ466E-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SQJQ466E-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |
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SQJQ466E-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 200A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQJQ466E-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 200A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10210 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |