SQJQ906EL-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 3.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJQ906EL-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJQ906EL-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 160 A, 160 A, 0.0036 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 160A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 160A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0036ohm, Verlustleistung, p-Kanal: 187W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0036ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 187W, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SQJQ906EL-T1_GE3 nach Preis ab 2.78 EUR bis 6.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SQJQ906EL-T1_GE3 | Hersteller : Vishay Semiconductors | MOSFET 40V Vds 160A Id AEC-Q101 Qualified |
auf Bestellung 3883 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
SQJQ906EL-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SQJQ906EL-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJQ906EL-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 160 A, 160 A, 0.0036 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 160A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 160A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0036ohm Verlustleistung, p-Kanal: 187W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.0036ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 187W Betriebstemperatur, max.: 175°C |
auf Bestellung 1657 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SQJQ906EL-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJQ906EL-T1_GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 160 A, 160 A, 0.0036 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 160A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0036ohm Verlustleistung, p-Kanal: 187W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0036ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 187W SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 1783 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SQJQ906EL-T1_GE3 | Hersteller : Vishay | Trans MOSFET N-CH 40V 160A Automotive 5-Pin(4+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |