SQM110N05-06L_GE3 Vishay Semiconductors
auf Bestellung 798 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.12 EUR |
| 10+ | 5.93 EUR |
| 100+ | 4.71 EUR |
| 250+ | 4.34 EUR |
| 500+ | 3.72 EUR |
| 800+ | 3.2 EUR |
| 4800+ | 3.12 EUR |
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Technische Details SQM110N05-06L_GE3 Vishay Semiconductors
Description: MOSFET N-CH 55V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V.
Weitere Produktangebote SQM110N05-06L_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SQM110N05-06L-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263 |
Produkt ist nicht verfügbar |
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SQM110N05-06L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQM110N05-06L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQM110N05-06L-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-SQM110N0506L_GE3 |
Produkt ist nicht verfügbar |