SQM120N03-1m5L_GE3 Vishay Semiconductors
auf Bestellung 757 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.87 EUR |
10+ | 7.46 EUR |
25+ | 7.05 EUR |
100+ | 6.06 EUR |
250+ | 5.69 EUR |
500+ | 4.86 EUR |
800+ | 4.32 EUR |
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Technische Details SQM120N03-1m5L_GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V.
Weitere Produktangebote SQM120N03-1m5L_GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SQM120N03-1M5L_GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) TO-263 |
Produkt ist nicht verfügbar |
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SQM120N03-1m5L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V |
Produkt ist nicht verfügbar |
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SQM120N03-1m5L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V |
Produkt ist nicht verfügbar |
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SQM120N03-1M5L-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT SQM120N031M5LGE |
Produkt ist nicht verfügbar |