Produkte > VISHAY SILICONIX > SQM120N04-1m7L_GE3
SQM120N04-1m7L_GE3

SQM120N04-1m7L_GE3 Vishay Siliconix

sqm120n0.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+4.74 EUR
1600+ 4.06 EUR
Mindestbestellmenge: 800
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Technische Details SQM120N04-1m7L_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V.

Weitere Produktangebote SQM120N04-1m7L_GE3 nach Preis ab 4.11 EUR bis 7.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQM120N04-1m7L_GE3 SQM120N04-1m7L_GE3 Hersteller : Vishay Siliconix sqm120n0.pdf Description: MOSFET N-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
auf Bestellung 2298 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.85 EUR
10+ 6.59 EUR
100+ 5.33 EUR
Mindestbestellmenge: 4
SQM120N04-1m7L_GE3 SQM120N04-1m7L_GE3 Hersteller : Vishay / Siliconix sqm120n0.pdf MOSFET 40V 120A 375W AEC-Q101 Qualified
auf Bestellung 9235 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.98 EUR
10+ 6.71 EUR
25+ 6.32 EUR
100+ 5.41 EUR
250+ 5.1 EUR
500+ 4.81 EUR
800+ 4.11 EUR
Mindestbestellmenge: 7
SQM120N04-1M7L_GE3 SQM120N04-1M7L_GE3 Hersteller : Vishay sqm120n0.pdf Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) TO-263
Produkt ist nicht verfügbar
SQM120N04-1M7L-GE3 Hersteller : Vishay sqm120n0.pdf Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) TO-263
Produkt ist nicht verfügbar
SQM120N04-1M7L-GE3 SQM120N04-1M7L-GE3 Hersteller : Vishay sqm120n0.pdf Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK Automotive AEC-Q101
Produkt ist nicht verfügbar
SQM120N04-1M7L-GE3 SQM120N04-1M7L-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQM120N041M7LGE
Produkt ist nicht verfügbar