SQM120N10-3M8_GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 421 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.92 EUR |
| 17+ | 4.43 EUR |
| 23+ | 3.22 EUR |
| 24+ | 3.05 EUR |
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Technische Details SQM120N10-3M8_GE3 VISHAY
Description: MOSFET N-CH 100V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQM120N10-3M8_GE3 nach Preis ab 3.05 EUR bis 8.92 EUR
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SQM120N10-3M8_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 125nC Kind of channel: enhanced |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120N10-3M8_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) |
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SQM120N10-3M8_GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-Channel 100V AEC-Q101 Qualified |
auf Bestellung 4546 Stücke: Lieferzeit 14-28 Tag (e) |
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SQM120N10-3M8-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK |
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SQM120N10-3M8_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SQM120N10-3M8_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM120N10-3M8-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT SQM120N10-3M8_GE3 |
Produkt ist nicht verfügbar |