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SQM200N04-1m1L_GE3

SQM200N04-1m1L_GE3 Vishay Semiconductors


sqm200n041m1l.pdf Hersteller: Vishay Semiconductors
MOSFET 40V 200A, 375W AEC-Q101 Qualified
auf Bestellung 5 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.14 EUR
10+ 9.1 EUR
100+ 7.44 EUR
500+ 6.37 EUR
800+ 5.12 EUR
2400+ 5.1 EUR
4800+ 4.84 EUR
Mindestbestellmenge: 6
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Technische Details SQM200N04-1m1L_GE3 Vishay Semiconductors

Description: MOSFET N-CH 40V 200A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V.

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SQM200N04-1M1L-GE3 SQM200N04-1M1L-GE3 Hersteller : Vishay sqm200n041m1l.pdf Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263
Produkt ist nicht verfügbar
SQM200N04-1M1L_GE3 SQM200N04-1M1L_GE3 Hersteller : Vishay sqm200n041m1l.pdf Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263
Produkt ist nicht verfügbar
SQM200N04-1m1L_GE3 SQM200N04-1m1L_GE3 Hersteller : Vishay Siliconix sqm200n041m1l.pdf Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Produkt ist nicht verfügbar
SQM200N04-1m1L_GE3 SQM200N04-1m1L_GE3 Hersteller : Vishay Siliconix sqm200n041m1l.pdf Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Produkt ist nicht verfügbar