SQM40031EL_GE3 Vishay
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 4.36 EUR |
| 44+ | 3.51 EUR |
| 47+ | 3.16 EUR |
| 100+ | 2.58 EUR |
| 250+ | 2.33 EUR |
| 500+ | 1.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQM40031EL_GE3 Vishay
Description: MOSFET P-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQM40031EL_GE3 nach Preis ab 1.83 EUR bis 6.94 EUR
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SQM40031EL_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) TO-263 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM40031EL_GE3 | Hersteller : Vishay Semiconductors |
MOSFET P Ch -40V Vds AEC-Q101 Qualified |
auf Bestellung 4491 Stücke: Lieferzeit 14-28 Tag (e) |
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SQM40031EL_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM40031EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 120 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm |
auf Bestellung 3856 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM40031EL_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) TO-263 |
Produkt ist nicht verfügbar |
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SQM40031EL_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) TO-263 |
Produkt ist nicht verfügbar |
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SQM40031EL_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM40031EL_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |