SQM50020EL_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQM50020EL_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM50020EL_GE3 nach Preis ab 4.16 EUR bis 8.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQM50020EL_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1364 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SQM50020EL_GE3 | Hersteller : Vishay / Siliconix |
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 7181 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SQM50020EL_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM50020EL_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 120 A, 0.0016 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm |
auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SQM50020EL_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SQM50020EL_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |