SQM50N04-4M1_GE3

SQM50N04-4m1_GE3

SQM50N04-4m1_GE3

Hersteller: Vishay Semiconductors
MOSFET 40V 50A 150W AEC-Q101 Qualified
sqm50n044m1-1764687.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 532 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.49 EUR
10+ 6.73 EUR
25+ 6.37 EUR
100+ 5.43 EUR

Technische Details SQM50N04-4m1_GE3

Description: MOSFET N-CH 40V 50A TO-263, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 150W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: SQM50N, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D²Pak).

Preis SQM50N04-4m1_GE3 ab 5.43 EUR bis 7.49 EUR

SQM50N04-4M1_GE3
Hersteller: Vishay
Trans MOSFET N-CH 40V 5A Automotive 3-Pin(2+Tab) TO-263
sqm50n044m1.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM50N04-4M1_GE3
SQM50N04-4M1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO-263
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SQM50N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
sqm50n044m1.pdf
auf Bestellung 745 Stücke
Lieferzeit 21-28 Tag (e)
SQM50N04-4M1_GE3
SQM50N04-4M1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQM50N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
sqm50n044m1.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen