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SQM50P03-07_GE3

SQM50P03-07_GE3 Vishay Siliconix

sqm50p03.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.37 EUR
Mindestbestellmenge: 800
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Technische Details SQM50P03-07_GE3 Vishay Siliconix

Description: MOSFET P-CHANNEL 30V 50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQM50P03-07_GE3 nach Preis ab 2.7 EUR bis 6.06 EUR

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SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay Siliconix sqm50p03.pdf Description: MOSFET P-CHANNEL 30V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1575 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.03 EUR
10+ 5 EUR
100+ 3.98 EUR
Mindestbestellmenge: 5
SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay / Siliconix sqm50p03.pdf MOSFET P-Channel 30V AEC-Q101 Qualified
auf Bestellung 10977 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.06 EUR
11+ 5.04 EUR
100+ 4 EUR
250+ 3.85 EUR
500+ 3.38 EUR
800+ 2.73 EUR
5600+ 2.7 EUR
Mindestbestellmenge: 9
SQM50P03-07-GE3 SQM50P03-07-GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
SQM50P03-07_GE3 SQM50P03-07_GE3 Hersteller : Vishay sqm50p03.pdf Trans MOSFET P-CH 30V 50A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
SQM50P03-07-GE3 SQM50P03-07-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT 78-SQM50P03-07_GE3
Produkt ist nicht verfügbar