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SQM50P04-09L_GE3

SQM50P04-09L_GE3 Vishay Siliconix

sqm50p04.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.37 EUR
Mindestbestellmenge: 800
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Technische Details SQM50P04-09L_GE3 Vishay Siliconix

Description: MOSFET P-CHANNEL 40V 50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SQM50P04-09L_GE3 nach Preis ab 2.73 EUR bis 6.06 EUR

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SQM50P04-09L_GE3 SQM50P04-09L_GE3 Hersteller : Vishay Siliconix sqm50p04.pdf Description: MOSFET P-CHANNEL 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1476 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.03 EUR
10+ 5 EUR
100+ 3.98 EUR
Mindestbestellmenge: 5
SQM50P04-09L_GE3 SQM50P04-09L_GE3 Hersteller : Vishay / Siliconix sqm50p04.pdf MOSFET P-Chnl 40-V (D-S) AEC-Q101 Qualified
auf Bestellung 1377 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.06 EUR
11+ 5.04 EUR
100+ 4 EUR
250+ 3.85 EUR
500+ 3.38 EUR
800+ 2.76 EUR
2400+ 2.73 EUR
Mindestbestellmenge: 9
SQM50P04-09L_GE3 SQM50P04-09L_GE3 Hersteller : Vishay sqm50p04.pdf Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK
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