SQP100N04-3m6_GE3 Vishay / Siliconix
auf Bestellung 676 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.36 EUR |
11+ | 4.84 EUR |
100+ | 3.87 EUR |
500+ | 3.17 EUR |
1000+ | 2.65 EUR |
2500+ | 2.44 EUR |
5000+ | 2.38 EUR |
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Technische Details SQP100N04-3m6_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SQP100N04-3m6_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
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