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SQP100N04-3m6_GE3

SQP100N04-3m6_GE3 Vishay / Siliconix


sqp100n04_3m6-1764444.pdf Hersteller: Vishay / Siliconix
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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Lieferzeit 14-28 Tag (e)
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10+5.36 EUR
11+ 4.84 EUR
100+ 3.87 EUR
500+ 3.17 EUR
1000+ 2.65 EUR
2500+ 2.44 EUR
5000+ 2.38 EUR
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Technische Details SQP100N04-3m6_GE3 Vishay / Siliconix

Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.

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SQP100N04-3m6_GE3 SQP100N04-3m6_GE3 Hersteller : Vishay Siliconix sqp100n04-3m6.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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