SQP50N06-09L_GE3

SQP50N06-09L_GE3

SQP50N06-09L_GE3

Hersteller: Vishay / Siliconix
MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified
sqp50n06_09l-1764121.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 385 Stücke
Lieferzeit 14-28 Tag (e)
9+ 6.45 EUR
10+ 5.82 EUR
25+ 5.49 EUR
100+ 4.68 EUR

Technische Details SQP50N06-09L_GE3

Description: MOSFET N-CH 60V 50A TO220AB, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-220-3, Supplier Device Package: TO-220AB, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 136W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.

Preis SQP50N06-09L_GE3 ab 4.68 EUR bis 6.45 EUR

SQP50N06-09L_GE3
SQP50N06-09L_GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(3+Tab) TO-220AB
sqp50n06-09l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQP50N06-09L_GE3
SQP50N06-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
sqp50n06-09l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQP50N06-09L_GE3
SQP50N06-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
sqp50n06-09l.pdf
auf Bestellung 424 Stücke
Lieferzeit 21-28 Tag (e)
SQP50N06-09L_GE3
SQP50N06-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
sqp50n06-09l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQP50N06-09L_GE3
SQP50N06-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
sqp50n06-09l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen