SQP90P06-07L_GE3 Vishay Semiconductors
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Technische Details SQP90P06-07L_GE3 Vishay Semiconductors
Description: MOSFET P-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQP90P06-07L_GE3
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SQP90P06-07L_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 120A Automotive 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SQP90P06-07L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |