SQR40N10-25_GE3

SQR40N10-25_GE3

SQR40N10-25_GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 40A Automotive 4-Pin(3+Tab) DPAK
sqr40n10-25.pdf
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Technische Details SQR40N10-25_GE3

Description: MOSFET N-CH 100V 40A TO252, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 136W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-252-4, DPak (3 Leads + Tab), Supplier Device Package: TO-252 (DPAK) Reverse Lead.

Preis SQR40N10-25_GE3 ab 0 EUR bis 0 EUR

SQR40N10-25_GE3
SQR40N10-25_GE3
Hersteller: Vishay Semiconductors
MOSFET 100V 40A 136W AEC-Q101 Qualified
sqr40n10_25-1764870.pdf
auf Bestellung 1900 Stücke
Lieferzeit 14-28 Tag (e)
SQR40N10-25_GE3
SQR40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252 REV
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Packaging: Cut Tape (CT)
sqr40n10-25.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQR40N10-25_GE3
SQR40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
sqr40n10-25.pdf
auf Bestellung 1998 Stücke
Lieferzeit 21-28 Tag (e)
SQR40N10-25_GE3
SQR40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252 REV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
sqr40n10-25.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen