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SQR40N10-25_GE3

SQR40N10-25_GE3 Vishay Semiconductors


sqr40n10-25.pdf Hersteller: Vishay Semiconductors
MOSFET 100V 40A 136W AEC-Q101 Qualified
auf Bestellung 1886 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.56 EUR
12+ 4.63 EUR
100+ 3.67 EUR
250+ 3.38 EUR
500+ 3.09 EUR
1000+ 2.63 EUR
2000+ 2.49 EUR
Mindestbestellmenge: 10
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Technische Details SQR40N10-25_GE3 Vishay Semiconductors

Description: MOSFET N-CH 100V 40A TO252 REV, Packaging: Tape & Reel (TR), Package / Case: TO-252-4, DPak (3 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK) Reverse Lead, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V.

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SQR40N10-25_GE3 SQR40N10-25_GE3 Hersteller : Vishay sqr40n10-25.pdf Trans MOSFET N-CH 100V 40A Automotive 4-Pin(3+Tab) DPAK
Produkt ist nicht verfügbar
SQR40N10-25_GE3 SQR40N10-25_GE3 Hersteller : Vishay Siliconix sqr40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252 REV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Produkt ist nicht verfügbar
SQR40N10-25_GE3 SQR40N10-25_GE3 Hersteller : Vishay Siliconix sqr40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252 REV
Packaging: Cut Tape (CT)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Produkt ist nicht verfügbar
SQR40N10-25-GE3 SQR40N10-25-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQR40N10-25_GE3
Produkt ist nicht verfügbar