SQS400EN-T1-GE3

SQS400EN-T1-GE3

SQS400EN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A TO263
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 62.5W
Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide

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Technische Details SQS400EN-T1-GE3

Description: MOSFET N-CH 40V 16A TO263, Supplier Device Package: TO-263 (D2Pak), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Power - Max: 62.5W, Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 20V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 40V, FET Feature: Logic Level Gate, FET Type: MOSFET N-Channel, Metal Oxide.

Preis SQS400EN-T1-GE3 ab 0 EUR bis 0 EUR