SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

Hersteller: Vishay Semiconductors
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
sqs405enw-1764055.pdf
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auf Bestellung 4731 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQS405ENW-T1_GE3

Description: MOSFET P-CH 12V 16A POWERPAK1212, Base Part Number: SQS405, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 39W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V, Vgs (Max): ±8V, Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 12V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA.

Preis SQS405ENW-T1_GE3 ab 0 EUR bis 0 EUR

SQS405ENW-T1_GE3
SQS405ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
sqs405en.pdf
auf Bestellung 1977 Stücke
Lieferzeit 21-28 Tag (e)
SQS405ENW-T1_GE3
SQS405ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
sqs405en.pdf
auf Bestellung 1977 Stücke
Lieferzeit 21-28 Tag (e)
SQS405ENW-T1_GE3
SQS405ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
sqs405en.pdf
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