SQS407ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 28993 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.97 EUR |
| 6000+ | 0.93 EUR |
| 9000+ | 0.88 EUR |
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Technische Details SQS407ENW-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS407ENW-T1_GE3 nach Preis ab 0.94 EUR bis 2.34 EUR
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SQS407ENW-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W |
auf Bestellung 71948 Stücke: Lieferzeit 14-28 Tag (e) |
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SQS407ENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8W Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 28993 Stücke: Lieferzeit 21-28 Tag (e) |
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SQS407ENW-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQS407ENW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 6 A, 0.0265 ohm, SOT-23, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 6 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.1 Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0265 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |