SQS415ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.02 EUR |
| 6000+ | 0.97 EUR |
| 9000+ | 0.93 EUR |
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Technische Details SQS415ENW-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS415ENW-T1_GE3 nach Preis ab 0.98 EUR bis 2.47 EUR
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SQS415ENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 16A PPAK1212-8W Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10445 Stücke: Lieferzeit 21-28 Tag (e) |
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SQS415ENW-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W |
auf Bestellung 24038 Stücke: Lieferzeit 14-28 Tag (e) |
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SQS415ENW-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQS415ENW-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 16 A, 0.013 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62.5W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.013ohm |
auf Bestellung 13083 Stücke: Lieferzeit 14-21 Tag (e) |
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SQS415ENW-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 16A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |