SQS460ENW-T1_GE3 Vishay Semiconductors
auf Bestellung 37852 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.06 EUR |
| 31+ | 1.7 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.91 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.81 EUR |
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Technische Details SQS460ENW-T1_GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 8A PPAK1212-8W, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQS460ENW-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SQS460ENW-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 8A PPAK1212-8WPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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SQS460ENW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 8A PPAK1212-8W Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |