SQS462EN-T1_GE3

SQS462EN-T1_GE3

SQS462EN-T1_GE3

Hersteller: Vishay Semiconductors
MOSFET 60V 8A 33W AEC-Q101 Qualified
sqs462en-1765624.pdf
verfügbar/auf Bestellung
auf Bestellung 24925 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQS462EN-T1_GE3

Description: MOSFET N-CH 60V 8A 1212-8, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, Power Dissipation (Max): 33W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8.

Preis SQS462EN-T1_GE3 ab 0 EUR bis 0 EUR

SQS462EN-T1_GE3
SQS462EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
sqs462en.pdf
auf Bestellung 2741 Stücke
Lieferzeit 21-28 Tag (e)
SQS462EN-T1_GE3
SQS462EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
sqs462en.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen