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SQS482EN-T1_GE3

SQS482EN-T1_GE3 Vishay Siliconix

sqs482en.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.87 EUR
Mindestbestellmenge: 3000
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Technische Details SQS482EN-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V.

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SQS482EN-T1_GE3 SQS482EN-T1_GE3 Hersteller : Vishay Siliconix sqs482en.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
auf Bestellung 7987 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
16+ 1.71 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
SQS482EN-T1_GE3 SQS482EN-T1_GE3 Hersteller : Vishay / Siliconix sqs482en.pdf MOSFET 30V 16A 62W AEC-Q101 Qualified
auf Bestellung 2980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.22 EUR
27+ 2 EUR
100+ 1.56 EUR
500+ 1.29 EUR
1000+ 1.02 EUR
3000+ 0.95 EUR
6000+ 0.9 EUR
Mindestbestellmenge: 24
SQS482EN-T1_GE3 SQS482EN-T1_GE3 Hersteller : Vishay sqs482en.pdf Trans MOSFET N-CH 30V 16A Automotive 8-Pin PowerPAK 1212 T/R
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SQS482EN-T1-GE3 Hersteller : Vishay sqs482en.pdf Trans MOSFET N-CH 30V 16A Automotive 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar