Produkte > VISHAY SILICONIX > SQSA12CENW-T1_GE3
SQSA12CENW-T1_GE3

SQSA12CENW-T1_GE3 Vishay Siliconix


doc?78974 Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
Mindestbestellmenge: 3000
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Technische Details SQSA12CENW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.

Weitere Produktangebote SQSA12CENW-T1_GE3 nach Preis ab 0.87 EUR bis 2.23 EUR

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Preis ohne MwSt
SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay Siliconix doc?78974 Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.87 EUR
100+ 1.29 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay / Siliconix doc?78974 MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET
auf Bestellung 33380 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
28+ 1.92 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.96 EUR
6000+ 0.94 EUR
9000+ 0.87 EUR
Mindestbestellmenge: 24
SQSA12CENW-T1_GE3 Hersteller : Vishay sqsa12cenw.pdf N-CHANNEL 100-V (D-S) 175C MOSFET
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