SS115LHR3G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SS115LHR3G Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 150 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SS115LHR3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SS115LHR3G | Hersteller : Taiwan Semiconductor | Schottky Diodes & Rectifiers 1A,150V, SMF SCHOTTKY RECTIFIER |
Produkt ist nicht verfügbar |