SS1F4HM3/I Vishay General Semiconductor
auf Bestellung 17138 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.11 EUR |
| 67+ | 0.79 EUR |
| 131+ | 0.4 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.25 EUR |
| 10000+ | 0.19 EUR |
| 50000+ | 0.18 EUR |
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Technische Details SS1F4HM3/I Vishay General Semiconductor
Description: DIODE SCHOTTKY 40V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 85pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 40 V.
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SS1F4HM3/I | Hersteller : Vishay |
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SS1F4HM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
Produkt ist nicht verfügbar |