SSS4N60BT

SSS4N60BT Fairchild Semiconductor


FAIRS17309-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: TRANS MOSFET N-CH 600V 4A 3PIN(3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 1962 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
888+0.82 EUR
Mindestbestellmenge: 888
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Technische Details SSS4N60BT Fairchild Semiconductor

Description: TRANS MOSFET N-CH 600V 4A 3PIN(3, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tj), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V.

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SSS4N60BT Hersteller : ONSEMI FAIRS17309-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - SSS4N60BT - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
auf Bestellung 1962 Stücke:
Lieferzeit 14-21 Tag (e)
SSS4N60BT SSS4N60BT Hersteller : onsemi / Fairchild FAIRS17309-1.pdf?t.download=true&u=5oefqw MOSFET NCh/600V/2.3a/2.5Ohm
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