STP8NM50 STMicroelectronics NV


en.CD00002689.pdf Hersteller: STMicroelectronics NV
N-кан. MOSFET 550V, 8A, 0.8 Ом, 120Вт, TO-220 (Zener-Protected SuperMESH)
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Technische Details STP8NM50 STMicroelectronics NV

Description: MOSFET N-CH 550V 8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V.

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STP8NM50 STP8NM50 Hersteller : STMicroelectronics 5507cd00002689.pdf Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB Tube
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STP8NM50 STP8NM50 Hersteller : STMicroelectronics en.CD00002689.pdf Description: MOSFET N-CH 550V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Produkt ist nicht verfügbar
STP8NM50 STP8NM50 Hersteller : STMicroelectronics en.CD00002689-1219735.pdf MOSFET N-Ch 500 Volt 8 Amp
Produkt ist nicht verfügbar