SUD06N10-225L-GE3

SUD06N10-225L-GE3

Hersteller:
SUD06N10 Trans MOSFET N-CH 100V 6.5A 3-Pin(2+Tab) TO-252AA
sud06n10-225l-ge3.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SUD06N10-225L-GE3

Description: MOSFET N-CH 100V 6.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tape & Reel (TR), Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: TO-252AA, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.

Preis SUD06N10-225L-GE3 ab 0 EUR bis 0 EUR

SUD06N10-225L-GE3
Hersteller:
SUD06N10 Trans MOSFET N-CH 100V 6.5A 3-Pin(2+Tab) TO-252AA
sud06n10-225l-ge3.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD06N10-225L-GE3
Hersteller:
SUD06N10 Trans MOSFET N-CH 100V 6.5A 3-Pin(2+Tab) TO-252AA
sud06n10-225l-ge3.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD06N10-225L-GE3
SUD06N10-225L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A DPAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
sud06n10-225l-ge3.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD06N10-225L-GE3
SUD06N10-225L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
sud06n10-225l-ge3.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen