Produkte > VISHAY SILICONIX > SUD06N10-225L-GE3
SUD06N10-225L-GE3

SUD06N10-225L-GE3 Vishay Siliconix


to252aa.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SUD06N10-225L-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 6.5A TO252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.

Weitere Produktangebote SUD06N10-225L-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Hersteller : Vishay Siliconix to252aa.pdf Description: MOSFET N-CH 100V 6.5A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH