Produkte > VISHAY SILICONIX > SUD19P06-60-BE3
SUD19P06-60-BE3

SUD19P06-60-BE3 Vishay Siliconix

sud19p06-60.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 3741 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.68 EUR
12+ 2.2 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 10
Produktrezensionen
Produktbewertung abgeben

Technische Details SUD19P06-60-BE3 Vishay Siliconix

Description: MOSFET P-CH 60V 18.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.

Weitere Produktangebote SUD19P06-60-BE3 nach Preis ab 1.1 EUR bis 2.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SUD19P06-60-BE3 SUD19P06-60-BE3 Hersteller : Vishay / Siliconix sud19p06-60.pdf MOSFET P-CHANNEL 60V (D-S)
auf Bestellung 15362 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.73 EUR
24+ 2.24 EUR
100+ 1.74 EUR
500+ 1.48 EUR
1000+ 1.2 EUR
2000+ 1.12 EUR
4000+ 1.1 EUR
Mindestbestellmenge: 20
SUD19P06-60-BE3 SUD19P06-60-BE3 Hersteller : Vishay Siliconix sud19p06-60.pdf Description: MOSFET P-CH 60V 18.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Produkt ist nicht verfügbar