SUD23N06-31-T4-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.36 EUR |
| 50+ | 1.77 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUD23N06-31-T4-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V, Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote SUD23N06-31-T4-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SUD23N06-31-T4-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 21.4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SUD23N06-31-T4-GE3 | Vishay Semiconductors |
MOSFETs N-Channel 60-V (D-S) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SUD23N06-31-T4-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 17.1A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 17.1A Pulsed drain current: 50A Power dissipation: 31.25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SUD23N06-31-T4-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SUD23N06-31-T4-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Channel 60-V (D-S)
MOSFETs N-Channel 60-V (D-S)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUD23N06-31-T4-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 17.1A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Pulsed drain current: 50A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 17.1A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Pulsed drain current: 50A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH