auf Bestellung 3339 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 2.35 EUR |
| 28+ | 1.91 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.13 EUR |
| 5000+ | 0.9 EUR |
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Technische Details SUD23N06-31L-T4BE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V, Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote SUD23N06-31L-T4BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SUD23N06-31L-T4BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 23A 4-Pin(3+Tab) TO-252 |
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SUD23N06-31L-T4BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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SUD23N06-31L-T4BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |