SUD40N10-25-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.16 EUR |
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Technische Details SUD40N10-25-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote SUD40N10-25-E3 nach Preis ab 2.2 EUR bis 5.47 EUR
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SUD40N10-25-E3 | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SUD3 |
auf Bestellung 1774 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD40N10-25-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 2929 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD40N10-25-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD40N10-25-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SUD40N10-25-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SUD40N10-25-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 40A; Idm: 70A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 70A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |