SUD50P06-15-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 2.77 EUR |
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Technische Details SUD50P06-15-BE3 Vishay Siliconix
Description: MOSFET P-CH 60V 50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V, Power Dissipation (Max): 2.5W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V.
Weitere Produktangebote SUD50P06-15-BE3 nach Preis ab 2.73 EUR bis 6.19 EUR
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SUD50P06-15-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V |
auf Bestellung 3341 Stücke: Lieferzeit 21-28 Tag (e) |
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SUD50P06-15-BE3 | Hersteller : Vishay / Siliconix |
MOSFET P-CHANNEL 60V (D-S) |
auf Bestellung 33009 Stücke: Lieferzeit 14-28 Tag (e) |
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SUD50P06-15-BE3 | Hersteller : VISHAY |
Description: VISHAY - SUD50P06-15-BE3 - MOSFET, P-CH, 60V, 50A, TO-252 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: Y-EX Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 0 Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 1923 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD50P06-15-BE3 | Hersteller : Vishay |
Power MOSFET |
Produkt ist nicht verfügbar |
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| SUD50P06-15-BE3 | Hersteller : Vishay |
Power MOSFET |
Produkt ist nicht verfügbar |