SUF30J-E3/54 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 600V 3A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details SUF30J-E3/54 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: P600, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.