SUG90090E-GE3 Vishay Semiconductors
auf Bestellung 2490 Stücke:
Lieferzeit 414-428 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 10.45 EUR |
10+ | 8.79 EUR |
100+ | 7.07 EUR |
500+ | 6.32 EUR |
1000+ | 5.8 EUR |
2500+ | 5.59 EUR |
5000+ | 5.49 EUR |
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Technische Details SUG90090E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 200V 100A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 100 V.
Weitere Produktangebote SUG90090E-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SUG90090E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SUG90090E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 300A Power dissipation: 395W Case: TO247 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: THT Gate charge: 129nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUG90090E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 100A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 100 V |
Produkt ist nicht verfügbar |
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SUG90090E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 300A Power dissipation: 395W Case: TO247 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: THT Gate charge: 129nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |