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SUM110N04-2M1P-E3 VISHAY


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Technische Details SUM110N04-2M1P-E3 VISHAY

Description: MOSFET N-CH 40V 29A/110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 3.13W (Ta), 312W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18800 pF @ 20 V.

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SUM110N04-2M1P-E3
Produktcode: 164383
sum110n0.pdf Verschiedene Bauteile > Other components 3
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SUM110N04-2M1P-E3 SUM110N04-2M1P-E3 Hersteller : Vishay sum110n0.pdf Trans MOSFET N-CH 40V 29A 3-Pin(2+Tab) D2PAK
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SUM110N04-2M1P-E3 SUM110N04-2M1P-E3 Hersteller : Vishay Siliconix sum110n0.pdf Description: MOSFET N-CH 40V 29A/110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18800 pF @ 20 V
Produkt ist nicht verfügbar
SUM110N04-2M1P-E3 SUM110N04-2M1P-E3 Hersteller : Vishay Siliconix sum110n0.pdf Description: MOSFET N-CH 40V 29A/110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18800 pF @ 20 V
Produkt ist nicht verfügbar
SUM110N04-2M1P-E3 SUM110N04-2M1P-E3 Hersteller : Vishay / Siliconix VISH_S_A0003607295_1-2569077.pdf MOSFET RECOMMENDED ALT 78-SUM40010EL-GE3
Produkt ist nicht verfügbar