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SUM60020E-GE3

SUM60020E-GE3 Vishay Siliconix

sum60020e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 150A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+4.29 EUR
1600+ 3.67 EUR
2400+ 3.46 EUR
Mindestbestellmenge: 800
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Technische Details SUM60020E-GE3 Vishay Siliconix

Description: MOSFET N-CH 80V 150A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V.

Weitere Produktangebote SUM60020E-GE3 nach Preis ab 3.72 EUR bis 7.23 EUR

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SUM60020E-GE3 SUM60020E-GE3 Hersteller : Vishay Siliconix sum60020e.pdf Description: MOSFET N-CH 80V 150A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
auf Bestellung 2867 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.1 EUR
10+ 5.96 EUR
100+ 4.82 EUR
Mindestbestellmenge: 4
SUM60020E-GE3 SUM60020E-GE3 Hersteller : Vishay / Siliconix sum60020e.pdf MOSFET N-CHANNEL 80-V (D-S) MOSFET
auf Bestellung 20757 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.23 EUR
10+ 6.06 EUR
100+ 4.91 EUR
250+ 4.89 EUR
500+ 4.58 EUR
800+ 3.82 EUR
2400+ 3.72 EUR
Mindestbestellmenge: 8
SUM60020E-GE3 Hersteller : VISHAY sum60020e.pdf SUM60020E-GE3 SMD N channel transistors
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