Produkte > VISHAY > SUM60N02-3M9P-E3
SUM60N02-3M9P-E3

SUM60N02-3M9P-E3 Vishay


sum60n02.pdf Hersteller: Vishay
Trans MOSFET N-CH 20V 60A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SUM60N02-3M9P-E3 Vishay

Description: MOSFET N-CH 20V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.75W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V.

Weitere Produktangebote SUM60N02-3M9P-E3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SUM60N02-3M9P-E3 SUM60N02-3M9P-E3 Hersteller : Vishay Siliconix sum60n02.pdf Description: MOSFET N-CH 20V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V
Produkt ist nicht verfügbar
SUM60N02-3M9P-E3 SUM60N02-3M9P-E3 Hersteller : Vishay / Siliconix sum60n02-260479.pdf MOSFET 20V 60A 120W 3.9mohm @ 10V
Produkt ist nicht verfügbar