SUM70040M-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
auf Bestellung 787 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.05 EUR |
| 10+ | 5.94 EUR |
| 100+ | 4.8 EUR |
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Technische Details SUM70040M-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V.
Weitere Produktangebote SUM70040M-GE3 nach Preis ab 4.5 EUR bis 7.1 EUR
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SUM70040M-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs TO-263-7L |
auf Bestellung 1066 Stücke: Lieferzeit 14-28 Tag (e) |
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SUM70040M-GE3 | Hersteller : VISHAY |
Description: VISHAY - SUM70040M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040M-GE3 | Hersteller : VISHAY |
Description: VISHAY - SUM70040M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040M-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R |
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SUM70040M-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R |
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SUM70040M-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R |
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| SUM70040M-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70040M-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SUM70040M-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |