SUM70060E-GE3 Vishay Semiconductors
auf Bestellung 15495 Stücke:
Lieferzeit 322-336 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.84 EUR |
| 13+ | 4.03 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.76 EUR |
| 2400+ | 2.7 EUR |
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Technische Details SUM70060E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 131A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V.
Weitere Produktangebote SUM70060E-GE3
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SUM70060E-GE3 Produktcode: 180235 |
 Transistoren > MOSFET N-CH |
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SUM70060E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SUM70060E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM70060E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
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SUM70060E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
Produkt ist nicht verfügbar |
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SUM70060E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SUM70060E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |