SUM80090E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 128A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
Description: MOSFET N-CH 150V 128A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
auf Bestellung 414 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.05 EUR |
10+ | 5.94 EUR |
100+ | 4.8 EUR |
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Produktbewertung abgeben
Technische Details SUM80090E-GE3 Vishay Siliconix
Description: VISHAY - SUM80090E-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 128 A, 0.0075 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 128A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 375W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0075ohm, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote SUM80090E-GE3 nach Preis ab 4.32 EUR bis 7.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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SUM80090E-GE3 | Hersteller : Vishay / Siliconix | MOSFET 150V Vds 20V Vgs D2PAK (TO-263) |
auf Bestellung 7410 Stücke: Lieferzeit 14-28 Tag (e) |
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SUM80090E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 150V 128A 3-Pin(2+Tab) D2PAK |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM80090E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SUM80090E-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 128 A, 0.0075 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 128A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (10-Jun-2022) |
auf Bestellung 5128 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM80090E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 128A Pulsed drain current: 240A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUM80090E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 128A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V |
Produkt ist nicht verfügbar |
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SUM80090E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 128A Pulsed drain current: 240A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |