SUM90330E-GE3 Vishay Semiconductors
auf Bestellung 3141 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.98 EUR |
| 16+ | 3.28 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.03 EUR |
| 2400+ | 1.92 EUR |
| 4800+ | 1.87 EUR |
| 9600+ | 1.85 EUR |
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Technische Details SUM90330E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 200V 35.1A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc), Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V.
Weitere Produktangebote SUM90330E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SUM90330E-GE3 | Hersteller : Vishay |
 N-Channel 200 V MOSFET |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| SUM90330E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90330E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 35.1A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V |
Produkt ist nicht verfügbar |
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SUM90330E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 35.1A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SUM90330E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |