SUP53P06-20-E3 VISHAY
Hersteller: VISHAYCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.1 EUR |
| 26+ | 2.79 EUR |
| 36+ | 2.03 EUR |
| 38+ | 1.92 EUR |
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Technische Details SUP53P06-20-E3 VISHAY
Description: MOSFET P-CH 60V 9.2A/53A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V.
Weitere Produktangebote SUP53P06-20-E3 nach Preis ab 1.92 EUR bis 6.76 EUR
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SUP53P06-20-E3 | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -46.8A Power dissipation: 66.7W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 611 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP53P06-20-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 9.2A/53A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 3506 Stücke: Lieferzeit 21-28 Tag (e) |
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SUP53P06-20-E3 | Hersteller : Vishay Semiconductors |
MOSFET 60V 53A 104.2W 19.5mohm @ 10V |
auf Bestellung 8921 Stücke: Lieferzeit 14-28 Tag (e) |
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SUP53P06-20-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 9.2A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 918 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP53P06-20-E3 | Hersteller : VISHAY |
Description: VISHAY - SUP53P06-20-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 53 A, 0.0195 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 53A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 3.1W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0195ohm |
auf Bestellung 1404 Stücke: Lieferzeit 14-21 Tag (e) |